silicon dual matched pnp transistors semelab limited reserves the right to change test c onditions, parameter limits and package dimensions without notice. information furnished by semelab is believed to be both accurate and reliable at the time of going to press. however semelab assumes no responsibility for any errors or omissions discovered in its use. semelab encourage s customers to verify that datasheets are current before placing o rders. semelab limited semelab limited semelab limited semelab limited coventry road, lutterworth, leicestershire, le17 4 jb telephone +44 (0) 1455 556565 fax +44 (0) 1455 5526 12 email: sales@semelab-tt.com website: http://www.semelab-tt.com document number 2873 issue 2 page 1 of 4 2N3810DCSM ? matched dual transistor. ? dual ceramic hermetic package ? suitable for high gain, low noise, differential amplif ier, applications. ? screening options available absolute maximum ratings (t a = 25c unless otherwise stated) each side total device v cbo collector ? base voltage -60v v ceo collector ? emitter voltage -60v v ebo emitter ? base voltage -5v i c continuous collector current -50ma p d total power dissipation at t a = 25c 500mw 600mw (1) derate above 25c 2.86mw/c 3.43mw/c t j junction temperature range -65 to +200c t stg storage temperature range -65 to +200c thermal properties (each side) symbols parameters min. 1typ. max. units r ja thermal resistance, junction to ambient 350 c/w notes notes notes notes (1) total device power dissipation limited by package.
silicon dual matched pnp transistors 2N3810DCSM semelab limited semelab limited semelab limited semelab limited coventry road, lutterworth, leicestershire, le17 4 jb telephone +44 (0) 1455 556565 fax +44 (0) 1455 5526 12 email: sales@semelab-tt.com website: http://www.semelab-tt.com document number 2873 issue 2 page 2 of 4 electrical characteristics (each side, t a = 25c unless otherwise stated) symbols parameters test conditions min. typ max. units v (br)cbo collector-base breakdown voltage i c = -10a i e = 0 -60 v (br)ceo (2) collector-emitter breakdown voltage i c = -10ma i b = 0 -60 v (br)ebo emitter-base breakdown voltage i e = -10a i c = 0 -5 v v cb = -50v i e = 0 -10 na i cbo collector-cut-off current t a = 150c -10 a i ebo emitter-cut-off current v eb = -4v i c = 0 -20 na i c = -10a v ce = -5v 100 i c = -100a v ce = -5v 150 450 t a = -55c 60 i c = -500a v ce = -5v 150 450 i c = -1.0ma v ce = -5v 150 450 h fe (2) forward-current transfer ratio i c = -10ma v ce = -5v 125 v be (2) base-emitter voltage i c = -100a v ce = -5v -0.7 i c = -100a i b = -10a -0.7 v be(sat) (2) base-emitter saturation voltage i c = -1.0ma i b = = -100a -0.8 v i c = -100a i b = -10a -0.2 v ce(sat) (2) collector-emitter saturation voltage i c = -1.0ma i b = = -100a -0.25 electrical matching characteristics (t a = 25c unless otherwise stated) symbols parameters test conditions min. typ max. units 2 fe h 1 fe h (3) forward-current transfer ratio (gain ratio) i c = -100 a v ce = -5v 0.9 1.0 v ce = -5v i c = -10 a to -10ma 5 |v be1 -v be2 | base-emitter voltage differential v ce = -5v i c = -100 a 3 mv v ce = -5v i c = -100 a t a1 = 25c t a2 = -55c 0.8 v ce = -5v i c = -100 a | ? (v be1 -v be2 ) ? t a | base-emitter voltage differential change due to temperature t a1 = 25c t a2 = 125c 1.0 mv not not not notes eses es (2) pulse width 300us, 2% (3) the lower of the two readings is taken as h fe1
silicon dual matched pnp transistors 2N3810DCSM semelab limited semelab limited semelab limited semelab limited coventry road, lutterworth, leicestershire, le17 4 jb telephone +44 (0) 1455 556565 fax +44 (0) 1455 5526 12 email: sales@semelab-tt.com website: http://www.semelab-tt.com document number 2873 issue 2 page 3 of 4 dynamic characteristics symbols parameters test conditions min. typ max. units i c = -500a v ce = -5v f = 30mhz 1.0 i c = -1.0ma v ce = -5v |h fe | small signal forward-current transfer ratio f = 100mhz 1.0 5 i e = 0 v cb = -5v c obo output capacitance f = 1.0mhz 4 i c = 0 v eb = -0.5v c ibo input capacitance f = 1.0mhz 15 pf h ie (4) input impedance 3 30 k h oe (4) output admittance i c = -1.0ma v ce = -10v 5 60 hmos h re (4) voltage feedback ratio f = 1.0khz 25 x 10 -4 h fe small signal current gain 150 600 f=100hz bw=20hz 7 v ce = -10v f=1.0khz i c = -100 a bw=200hz 3 r g = 3k f=10khz noise figure bw=2khz 2.5 n f (4) noise figure (broadband) f=10hz to 15.7khz 3.5 db not not not notes eses es (4) by design only, not a production test.
silicon dual matched pnp transistors 2N3810DCSM semelab limited semelab limited semelab limited semelab limited coventry road, lutterworth, leicestershire, le17 4 jb telephone +44 (0) 1455 556565 fax +44 (0) 1455 5526 12 email: sales@semelab-tt.com website: http://www.semelab-tt.com document number 2873 issue 2 page 4 of 4 mechanical data dimensions in mm (inches) lcc2 (mo - 041bb) underside view pad 1 ? collector 1 pad 4 ? collector 2 pad 2 ? base 1 pad 5 ? emitter 2 pad 3 ? base 2 pad 6 ? emitter 1 1 2 6 3 4 5 2.54 0.13 (0.10 0.005) 0.64 0.06 (0.025 0.003) 0.23 (0.009) 1.40 0.15 (0.055 0.006) 1.65 0.13 (0.065 0.005) 2.29 0.20 (0.09 0.008) rad. a 1.27 0.13 (0.05 0.005) a = 6.22 0.13 (0.245 0.005) 4.32 0.13 (0.170 0.005)
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